Part Number

VWM200-01P

Manufacturer

Description
MOSFET 6N-CH 100V 210A V2
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of VWM200-01P
PackagingBulk
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C210A
Rds On (Max) @ Id, Vgs5.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) @ Vgs430nC @ 10V
Input Capacitance (Ciss) @ Vds-
Power - Max-
Mounting TypeThrough Hole
Package / CaseV2-PAK
Supplier Device PackageV2-PAK
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