- Part Number
VS-GB100TP120N
- Manufacturer
Vishay Semiconductor/Diodes Division
- Description
- IGBT 1200V 200A 650W INT-A-PAK
- Category
- Discrete Semiconductor Products
- Family
- IGBTs - Modules
- To learn about the specification of VS-GB100TP120N, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of VS-GB100TP120N
| IGBT Type | - | |
| Configuration | Half Bridge | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | 200A | |
| Power - Max | 650W | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A | |
| Current - Collector Cutoff (Max) | 5mA | |
| Input Capacitance (Cies) @ Vce | 7.43nF @ 25V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Mounting Type | Chassis Mount | |
| Package / Case | INT-A-Pak | |
| Supplier Device Package | INT-A-PAK | |
| Other Names | VSGB100TP120N | |
| call me | [email protected] | |
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