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- Part Number
VS-4EWH02FN-M3
- Manufacturer
Vishay Semiconductor/Diodes Division
- Description
- DIODE GEN PURP 200V 4A DPAK
- Category
- Discrete Semiconductor Products
- Family
- Diodes, Rectifiers - Single
- To learn about the specification of VS-4EWH02FN-M3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of VS-4EWH02FN-M3
| Packaging | Tube | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Current - Average Rectified (Io) | 4A | |
| Voltage - Forward (Vf) (Max) @ If | 950mV @ 4A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 20ns | |
| Current - Reverse Leakage @ Vr | 3µA @ 200V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | D-PAK (TO-252AA) | |
| Operating Temperature - Junction | -65°C ~ 175°C | |
| Other Names | VS-4EWH02FN-M3GI | |
| call me | [email protected] | |
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