Part Number

VQ1001P-E3

Manufacturer

Description
MOSFET 4N-CH 30V 0.83A 14DIP
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of VQ1001P-E3
Packaging*
FET Type4 N-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C830mA
Rds On (Max) @ Id, Vgs1.75 Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds110pF @ 15V
Power - Max2W
Mounting Type*
Package / Case-
Supplier Device Package*
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