UNR422200A

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Specifications of UNR422200A

Packaging	Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	200MHz
Power - Max	300mW
Mounting Type	Through Hole
Package / Case	NS-B1
Supplier Device Package	NS-B1
Other Names	UNR422200ATB
call me	[email protected]

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