UNR421D00A

To learn about the specification of UNR421D00A, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add UNR421D00A with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of UNR421D00A.
We are offering UNR421D00A for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of UNR421D00A

Packaging	Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	47k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	150MHz
Power - Max	300mW
Mounting Type	Through Hole
Package / Case	NS-B1
Supplier Device Package	NS-B1
Other Names	UNR421D00ATB
call me	[email protected]

UNR421D00A Related Products

Panasonic Electronic Components