UNR421100A

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Specifications of UNR421100A

Packaging	Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	150MHz
Power - Max	300mW
Mounting Type	Through Hole
Package / Case	NS-B1
Supplier Device Package	NS-B1
Other Names	UNR421100ATB
call me	[email protected]

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