TRS6E65C,S1Q

To learn about the specification of TRS6E65C,S1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TRS6E65C,S1Q with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of TRS6E65C,S1Q.
We are offering TRS6E65C,S1Q for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of TRS6E65C,S1Q

Packaging	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	6A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 6A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	90µA @ 650V
Capacitance @ Vr, F	35pF @ 650V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C (Max)
Other Names	TRS6E65CS1Q
call me	[email protected]

TRS6E65C,S1Q Related Products

Toshiba Semiconductor & Storage