- Part Number
TPN7R506NH,L1Q
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 60V 26A 8TSON
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of TPN7R506NH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of TPN7R506NH,L1Q
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 200µA | |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 30V | |
| Power - Max | 42W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-TSON Advance | |
| Other Names | TPN7R506NH,L1Q(M TPN7R506NHL1QTR | |
| call me | [email protected] | |
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