- Part Number
TPN22006NH,LQ
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N CH 60V 9A 8-TSON
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of TPN22006NH,LQ, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of TPN22006NH,LQ
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) | |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 710pF @ 30V | |
| Power - Max | 18W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-TSON Advance | |
| Other Names | TPN22006NH,LQ(S TPN22006NHLQ TPN22006NHLQTR | |
| call me | [email protected] | |
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