- Part Number
TPN2010FNH,L1Q
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 250V 5.6A 8TSON
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of TPN2010FNH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of TPN2010FNH,L1Q
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) | |
| Rds On (Max) @ Id, Vgs | 198 mOhm @ 2.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 200µA | |
| Gate Charge (Qg) @ Vgs | 7nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 600pF @ 100V | |
| Power - Max | 39W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-TSON Advance | |
| Other Names | TPN2010FNHL1QCT | |
| call me | [email protected] | |
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