- Part Number
TPC8018-H(TE12LQM)
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 30V 18A SOP8 2-6J1B
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of TPC8018-H(TE12LQM), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of TPC8018-H(TE12LQM)
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) | |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2265pF @ 10V | |
| Power - Max | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) | |
| Supplier Device Package | 8-SOP (5.5x6.0) | |
| call me | [email protected] | |
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