- Part Number
TK7J90E,S1E
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 900V TO-3PN
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of TK7J90E,S1E
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) | |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 3.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 700µA | |
| Gate Charge (Qg) @ Vgs | 32nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V | |
| Power - Max | 200W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3P(N) | |
| Other Names | TK7J90E,S1E(S TK7J90ES1E | |
| call me | [email protected] | |
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