- Part Number
TK33S10N1Z,LQ
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 100V 33A DPAK
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of TK33S10N1Z,LQ
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) | |
| Rds On (Max) @ Id, Vgs | 9.7 mOhm @ 16.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 500µA | |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2050pF @ 10V | |
| Power - Max | 125W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | DPAK+ | |
| Other Names | TK33S10N1ZLQCT | |
| call me | [email protected] | |
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