- Part Number
TK32E12N1,S1X
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N CH 120V 60A TO-220
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of TK32E12N1,S1X
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 120V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 500µA | |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 60V | |
| Power - Max | 98W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220 | |
| Other Names | TK32E12N1,S1X(S TK32E12N1S1X | |
| call me | [email protected] | |
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