- Part Number
TK31E60X,S1X
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 600V 30.8A TO-220
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of TK31E60X,S1X, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of TK31E60X,S1X
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Super Junction | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) | |
| Rds On (Max) @ Id, Vgs | 88 mOhm @ 9.4A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1.5mA | |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 3000pF @ 300V | |
| Power - Max | 230W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220 | |
| Other Names | TK31E60X,S1X(S TK31E60XS1X | |
| call me | [email protected] | |
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