- Part Number
TK12E60W,S1VX
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N CH 600V 11.5A TO-220
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of TK12E60W,S1VX
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Super Junction | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) | |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 5.8A, 10V | |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA | |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 890pF @ 300V | |
| Power - Max | 110W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220 | |
| Other Names | TK12E60WS1VX | |
| call me | [email protected] | |
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