- Part Number
TK10Q60W,S1VQ
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 600V 9.7A IPAK
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of TK10Q60W,S1VQ
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) | |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.9A, 10V | |
| Vgs(th) (Max) @ Id | 3.7V @ 500µA | |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 700pF @ 300V | |
| Power - Max | 80W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Stub Leads, IPak | |
| Supplier Device Package | I-Pak | |
| Other Names | TK10Q60WS1VQ | |
| call me | [email protected] | |
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