- Part Number
TK10A60E,S4X
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 600V TO220SIS
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of TK10A60E,S4X
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) | |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V | |
| Power - Max | 45W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | |
| Supplier Device Package | TO-220SIS | |
| Other Names | TK10A60E,S4X(S TK10A60E,S5X TK10A60E,S5X(M TK10A60ES4X TK10A60ES4X(S TK10A60ES4X(S-ND TK10A60ES5X TK10A60ES5X-ND | |
| call me | [email protected] | |
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