- Part Number
TK100E10N1,S1X
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET N-CH 100V 100A TO220
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of TK100E10N1,S1X
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) | |
| Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 140nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 8800pF @ 50V | |
| Power - Max | 255W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220 | |
| Other Names | TK100E10N1,S1X(S TK100E10N1S1X | |
| call me | [email protected] | |
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