- Part Number
SUP60N10-18P-E3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N-CH 100V 60A TO220AB
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of SUP60N10-18P-E3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Rds On (Max) @ Id, Vgs | 18.3 mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 75nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2600pF @ 50V | |
| Power - Max | 3.75W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| call me | [email protected] | |
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