- Part Number
SSM6J213FE(TE85L,F
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET P CH 20V 2.6A ES6
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SSM6J213FE(TE85L,F, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SSM6J213FE(TE85L,F
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate, 1.5V Drive | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) | |
| Rds On (Max) @ Id, Vgs | 103 mOhm @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 4.7nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 290pF @ 10V | |
| Power - Max | 500mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 | |
| Other Names | SSM6J213FE(TE85LFCT | |
| call me | [email protected] | |
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