- Part Number
SSM6J212FE,LF
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- MOSFET P-CH 20V 4A ES6
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of SSM6J212FE,LF
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate, 1.5V Drive | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) | |
| Rds On (Max) @ Id, Vgs | 40.7 mOhm @ 3A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 14.1nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 970pF @ 10V | |
| Power - Max | 500mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 | |
| Other Names | SSM6J212FE(TE85L,F SSM6J212FE(TE85LFTR SSM6J212FE(TE85LFTR-ND SSM6J212FE,LF(CA SSM6J212FELF SSM6J212FELFTR SSM6J212FETE85LF | |
| call me | [email protected] | |
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