Part Number

SISS27DN-T1-GE3

Manufacturer

Description
MOSFET P-CH 30V 50A PPAK 1212-8S
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SISS27DN-T1-GE3
PackagingCut Tape (CT)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) @ Vgs140nC @ 10V
Input Capacitance (Ciss) @ Vds5250pF @ 15V
Power - Max57W
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePowerPAK® 1212-8S
Other NamesSISS27DN-T1-GE3CT
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