- Part Number
SISS23DN-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET P-CH 20V 50A PPAK 1212-8S
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SISS23DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SISS23DN-T1-GE3
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 20A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 8840pF @ 15V | |
| Power - Max | 57W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad | |
| Supplier Device Package | PowerPAK® 1212-8S | |
| Other Names | SISS23DN-T1-GE3CT | |
| call me | [email protected] | |
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