Part Number

SIHU7N60E-GE3

Manufacturer

Description
MOSFET N-CH 600V 7A TO-251
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIHU7N60E-GE3
PackagingBulk
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs600 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs40nC @ 10V
Input Capacitance (Ciss) @ Vds680pF @ 100V
Power - Max78W
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-Pak
Other NamesSIHU7N60EGE3
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