Part Number

SIHU6N65E-GE3

Manufacturer

Description
MOSFET N-CH 650V 6A IPAK
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIHU6N65E-GE3
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs600 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs48nC @ 10V
Input Capacitance (Ciss) @ Vds820pF @ 100V
Power - Max78W
Mounting TypeThrough Hole
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB
Supplier Device PackageIPAK (TO-251)
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