- Part Number
SIHU3N50D-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N-CH 500V 3A TO251 IPAK
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SIHU3N50D-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SIHU3N50D-GE3
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3.2 Ohm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 175pF @ 100V | |
| Power - Max | 69W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Supplier Device Package | TO-251 | |
| call me | [email protected] | |
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