Part Number

SIHU3N50D-GE3

Manufacturer

Description
MOSFET N-CH 500V 3A TO251 IPAK
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIHU3N50D-GE3
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Rds On (Max) @ Id, Vgs3.2 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) @ Vgs12nC @ 10V
Input Capacitance (Ciss) @ Vds175pF @ 100V
Power - Max69W
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251
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