Part Number

SIHP12N65E-GE3

Manufacturer

Description
MOSFET N-CH 650V 12A TO-220AB
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIHP12N65E-GE3
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs380 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs70nC @ 10V
Input Capacitance (Ciss) @ Vds1224pF @ 100V
Power - Max156W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Other NamesSIHP12N65E-GE3CT
SIHP12N65E-GE3CT-ND
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