Part Number

SIHB23N60E-GE3

Manufacturer

Description
MOSFET N-CH 600V 23A D2PAK
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIHB23N60E-GE3
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs158 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs95nC @ 10V
Input Capacitance (Ciss) @ Vds2418pF @ 100V
Power - Max227W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
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