- Part Number
SIHB12N65E-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N-CH 650V 12A D2PAK
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SIHB12N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SIHB12N65E-GE3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1224pF @ 100V | |
| Power - Max | 156W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | D²PAK (TO-263) | |
| call me | [email protected] | |
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