Part Number

SIE836DF-T1-E3

Manufacturer

Description
MOSFET N-CH 200V 18.3A POLARPAK
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIE836DF-T1-E3
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18.3A (Tc)
Rds On (Max) @ Id, Vgs130 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) @ Vgs41nC @ 10V
Input Capacitance (Ciss) @ Vds1200pF @ 100V
Power - Max104W
Mounting TypeSurface Mount
Package / Case10-PolarPAK® (SH)
Supplier Device Package10-PolarPAK® (SH)
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