SIDC11D60SIC3

To learn about the specification of SIDC11D60SIC3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDC11D60SIC3 with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of SIDC11D60SIC3.
We are offering SIDC11D60SIC3 for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of SIDC11D60SIC3

Packaging	Bulk
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.9V @ 4A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	200µA @ 600V
Capacitance @ Vr, F	150pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	Wafer
Supplier Device Package	Sawn on foil
Operating Temperature - Junction	-55°C ~ 175°C
Other Names	SP000013868
call me	[email protected]

SIDC11D60SIC3 Related Products

Infineon Technologies