- Part Number
SIA910EDJ-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET 2N-CH 12V 4.5A SC-70-6
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of SIA910EDJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SIA910EDJ-T1-GE3
| Packaging | Tape & Reel (TR) | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 12V | |
| Current - Continuous Drain (Id) @ 25°C | 4.5A | |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 5.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 16nC @ 8V | |
| Input Capacitance (Ciss) @ Vds | 455pF @ 6V | |
| Power - Max | 7.8W | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SC-70-6 Dual | |
| Supplier Device Package | PowerPAK® SC-70-6 Dual | |
| Other Names | SIA910EDJ-T1-GE3TR SIA910EDJT1GE3 | |
| call me | [email protected] | |
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