- Part Number
SIA850DJ-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N-CH 190V 0.95A SC70-6
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SIA850DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SIA850DJ-T1-GE3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Diode (Isolated) | |
| Drain to Source Voltage (Vdss) | 190V | |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) | |
| Rds On (Max) @ Id, Vgs | 3.8 Ohm @ 360mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 4.5nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 90pF @ 100V | |
| Power - Max | 7W | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SC-70-6 Dual | |
| Supplier Device Package | PowerPAK® SC-70-6 Dual | |
| Other Names | SIA850DJ-T1-GE3-ND SIA850DJ-T1-GE3TR SIA850DJT1GE3 | |
| call me | [email protected] | |
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