Part Number

SIA850DJ-T1-GE3

Manufacturer

Description
MOSFET N-CH 190V 0.95A SC70-6
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIA850DJ-T1-GE3
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureDiode (Isolated)
Drain to Source Voltage (Vdss)190V
Current - Continuous Drain (Id) @ 25°C950mA (Tc)
Rds On (Max) @ Id, Vgs3.8 Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) @ Vgs4.5nC @ 10V
Input Capacitance (Ciss) @ Vds90pF @ 100V
Power - Max7W
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual
Other NamesSIA850DJ-T1-GE3-ND
SIA850DJ-T1-GE3TR
SIA850DJT1GE3
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