- Part Number
SIA429DJT-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET P-CH 20V 12A SC-70
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SIA429DJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SIA429DJT-T1-GE3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Rds On (Max) @ Id, Vgs | 20.5 mOhm @ 6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 62nC @ 8V | |
| Input Capacitance (Ciss) @ Vds | 1750pF @ 10V | |
| Power - Max | 19W | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SC-70-6 | |
| Supplier Device Package | PowerPAK® SC-70-6 Single | |
| Other Names | SIA429DJT-T1-GE3TR SIA429DJTT1GE3 | |
| call me | [email protected] | |
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