Part Number

SIA427DJ-T1-GE3

Manufacturer

Description
MOSFET P-CH 8V 12A SC-70-6
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIA427DJ-T1-GE3
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs16 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) @ Vgs50nC @ 5V
Input Capacitance (Ciss) @ Vds2300pF @ 4V
Power - Max19W
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6 Single
Other NamesSIA427DJ-T1-GE3TR
SIA427DJT1GE3
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