Part Number

SIA425EDJ-T1-GE3

Manufacturer

Description
MOSFET P-CH 20V 4.5A SC-70-6
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SIA425EDJ-T1-GE3
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Rds On (Max) @ Id, Vgs60 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds-
Power - Max15.6W
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6 Single
Other NamesSIA425EDJ-T1-GE3TR
SIA425EDJT1GE3
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