- Part Number
SI8900EDB-T2-E1
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET 2N-CH 20V 5.4A 10-MFP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of SI8900EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI8900EDB-T2-E1
| Packaging | Tape & Reel (TR) | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 5.4A | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | 1V @ 1.1mA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 10-UFBGA, CSPBGA | |
| Supplier Device Package | 10-Micro Foot™ CSP (2x5) | |
| Other Names | SI8900EDB-T2-E1TR | |
| call me | [email protected] | |
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