- Part Number
SI8429DB-T1-E1
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET P-CH 8V 11.7A 2X2 4-MFP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of SI8429DB-T1-E1
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate, 1.2V Drive | |
| Drain to Source Voltage (Vdss) | 8V | |
| Current - Continuous Drain (Id) @ 25°C | 11.7A (Tc) | |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 800mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 26nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 1640pF @ 4V | |
| Power - Max | 6.25W | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-XFBGA, CSPBGA | |
| Supplier Device Package | 4-Microfoot | |
| Other Names | SI8429DB-T1-E1TR SI8429DBT1E1 | |
| call me | [email protected] | |
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