SI7501DN-T1-E3

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Specifications of SI7501DN-T1-E3

Packaging	Cut Tape (CT)
FET Type	N and P-Channel, Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.4A, 4.5A
Rds On (Max) @ Id, Vgs	35 mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	1.6W
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual
Other Names	SI7501DN-T1-E3CT
call me	[email protected]

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