Part Number

SI6562DQ-T1-E3

Manufacturer

Description
MOSFET N/P-CH 20V 8-TSSOP
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of SI6562DQ-T1-E3
PackagingCut Tape (CT)
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Gate Charge (Qg) @ Vgs25nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max1W
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP
Other NamesSI6562DQ-T1-E3CT
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