- Part Number
SI6463BDQ-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET P-CH 20V 6.2A 8-TSSOP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SI6463BDQ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI6463BDQ-T1-GE3
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) | |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 7.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 800mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 60nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.05W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
| Supplier Device Package | 8-TSSOP | |
| Other Names | SI6463BDQ-T1-GE3CT | |
| call me | [email protected] | |
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