Part Number

SI5509DC-T1-E3

Manufacturer

Description
MOSFET N/P-CH 20V 6.1A 1206-8
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of SI5509DC-T1-E3
PackagingTape & Reel (TR)
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.1A, 4.8A
Rds On (Max) @ Id, Vgs52 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) @ Vgs6.6nC @ 5V
Input Capacitance (Ciss) @ Vds455pF @ 10V
Power - Max4.5W
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™
Other NamesSI5509DC-T1-E3TR
SI5509DCT1E3
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