- Part Number
SI5509DC-T1-E3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N/P-CH 20V 6.1A 1206-8
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of SI5509DC-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI5509DC-T1-E3
| Packaging | Tape & Reel (TR) | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 6.1A, 4.8A | |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 6.6nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 455pF @ 10V | |
| Power - Max | 4.5W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Supplier Device Package | 1206-8 ChipFET™ | |
| Other Names | SI5509DC-T1-E3TR SI5509DCT1E3 | |
| call me | [email protected] | |
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