Part Number

SI4967DY-T1-E3

Manufacturer

Description
MOSFET 2P-CH 12V 8SOIC
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of SI4967DY-T1-E3
PackagingTape & Reel (TR)
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs23 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) @ Vgs55nC @ 10V
Input Capacitance (Ciss) @ Vds-
Power - Max2W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
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