- Part Number
SI4900DY-T1-E3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET 2N-CH 60V 5.3A 8-SOIC
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of SI4900DY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI4900DY-T1-E3
| Packaging | Tape & Reel (TR) | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 5.3A | |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.3A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 665pF @ 15V | |
| Power - Max | 3.1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO | |
| Other Names | SI4900DY-T1-E3TR SI4900DYT1E3 | |
| call me | [email protected] | |
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