Part Number

SI4900DY-T1-E3

Manufacturer

Description
MOSFET 2N-CH 60V 5.3A 8-SOIC
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of SI4900DY-T1-E3
PackagingTape & Reel (TR)
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.3A
Rds On (Max) @ Id, Vgs58 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) @ Vgs20nC @ 10V
Input Capacitance (Ciss) @ Vds665pF @ 15V
Power - Max3.1W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Other NamesSI4900DY-T1-E3TR
SI4900DYT1E3
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