- Part Number
SI4829DY-T1-E3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET P-CH 20V 2A 8-SOIC
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SI4829DY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI4829DY-T1-E3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Diode (Isolated) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) | |
| Rds On (Max) @ Id, Vgs | 215 mOhm @ 2.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 8nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 210pF @ 10V | |
| Power - Max | 3.1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO | |
| call me | [email protected] | |
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