Part Number

SI4829DY-T1-E3

Manufacturer

Description
MOSFET P-CH 20V 2A 8-SOIC
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SI4829DY-T1-E3
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureDiode (Isolated)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Rds On (Max) @ Id, Vgs215 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) @ Vgs8nC @ 10V
Input Capacitance (Ciss) @ Vds210pF @ 10V
Power - Max3.1W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
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