Part Number

SI4462DY-T1-GE3

Manufacturer

Description
MOSFET N-CH 200V 1.15A 8-SOIC
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SI4462DY-T1-GE3
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C1.15A (Ta)
Rds On (Max) @ Id, Vgs480 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs9nC @ 10V
Input Capacitance (Ciss) @ Vds-
Power - Max1.3W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
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