Part Number

SI4200DY-T1-GE3

Manufacturer

Description
MOSFET 2N-CH 25V 8A 8SOIC
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of SI4200DY-T1-GE3
PackagingTape & Reel (TR)
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs25 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) @ Vgs12nC @ 10V
Input Capacitance (Ciss) @ Vds415pF @ 13V
Power - Max2.8W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
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