Part Number

SI4100DY-T1-GE3

Manufacturer

Description
MOSFET N-CH 100V 6.8A 8-SOIC
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SI4100DY-T1-GE3
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Rds On (Max) @ Id, Vgs63 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) @ Vgs20nC @ 10V
Input Capacitance (Ciss) @ Vds600pF @ 50V
Power - Max6W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Other NamesSI4100DY-T1-GE3-ND
SI4100DY-T1-GE3TR
SI4100DYT1GE3
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